Bending Two-Dimensional Materials To Control Charge Localization and Fermi-Level Shift.


High-performance electronics requires the fine control of semiconductor conductivity. In atomically thin two-dimensional (2D) materials, traditional doping technique for controlling carrier concentration and carrier type may cause crystal damage and significant mobility reduction. Contact engineering for tuning carrier injection and extraction and carrier… (More)
DOI: 10.1021/acs.nanolett.5b05303


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