Below-bandgap electroluminescence related to doping spikes in boron-implanted silicon pn diodes

@inproceedings{Sun2004BelowbandgapER,
  title={Below-bandgap electroluminescence related to doping spikes in boron-implanted silicon pn diodes},
  author={J. M. Sun and T. Dekorsy and W. Skorupa and Bernhard Schmidt and Arndt Muecklich and M. Helm},
  year={2004}
}
The origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied in silicon pn diodes prepared by boron implantation. The two peaks are related to the formation of p-type doping spikes on a nanometer scale. These doping spikes are generated by long-time thermal activation of preformed boron clusters. The peak with a larger binding energy stems from spatially indirect excitons bound to doping spikes in a strained environment, while the peak with a lower binding energy is… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-10 of 11 references

Appl. Phys. A: Mater. Sci. Process

  • T Dekorsy, J M Sun, W Skorupa, B Schmidt, M Helm
  • Appl. Phys. A: Mater. Sci. Process
  • 2004

Review B

  • Sun
  • REVIEW B
  • 2004

Appl. Phys. Lett

  • F Iacona, D Pacifici, +7 authors Fallica
  • Appl. Phys. Lett
  • 2002

Author to whom correspondence should be addressed; Electronic address: j.sun@fz-rossendorf

  • Nat. Mater
  • 2002

Electrochem. Solid-State Lett

  • L Rebohle, J Borany, +5 authors W Skorupa
  • Electrochem. Solid-State Lett
  • 2001

Nature

  • D Hirschman, L Tsybeskov, S P Duttagupta, P M Fauchet
  • Nature
  • 1996

38 Note that blue shifts also have been observed in heavily doped

  • Phys. Rev. B
  • 1994

Phys. Rev. B

  • M Stutzmann, M S Brandt, M Rosenbauer, J Weber, H D Fuchs
  • Phys. Rev. B
  • 1993

J. Appl. Phys

  • S Solmi, E Landi, F Baruffaldi
  • J. Appl. Phys
  • 1990

J. Cryst. Growth

  • K Ploog
  • J. Cryst. Growth
  • 1987

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