## A Study of Interpulse Instability in Gallium Nitride Power Amplifiers in Multifunction Radars

- Carlos G. Tua, Timothy Pratt, Amir I. Zaghloul
- IEEE Transactions on Microwave Theory and…
- 2016

- Published 2007 in IEEE Transactions on Microwave Theory and…

System-level models simplify the analysis of complex RF systems, such as transmission-reception modules, by expressing global input-output relationships. However, the development of high RF power models for nonlinear subsystems requires the prediction of the distortion induced by low-frequency memory effects such as self-heating effects. In this framework, we present a new electrothermal behavioral model for power amplifiers. This global model is based on the coupling between a behavioral electrical model derived from the transistor-level description of the amplifier and a thermal reduced model. This model, implemented into a circuit simulator, allows to predict the impact of the thermal effects in pulsed RF mode thanks to an envelope transient analysis. This approach has also been validated by measurements.

@article{Mazeau2007BehavioralTM,
title={Behavioral Thermal Modeling for Microwave Power Amplifier Design},
author={Julie Mazeau and R. Sommet and Daniel Caban-Chastas and Emmanuel Gatard and R. Quere and Yves Mancuso},
journal={IEEE Transactions on Microwave Theory and Techniques},
year={2007},
volume={55},
pages={2290-2297}
}