Behavioral Thermal Modeling for Microwave Power Amplifier Design

Abstract

System-level models simplify the analysis of complex RF systems, such as transmission-reception modules, by expressing global input-output relationships. However, the development of high RF power models for nonlinear subsystems requires the prediction of the distortion induced by low-frequency memory effects such as self-heating effects. In this framework, we present a new electrothermal behavioral model for power amplifiers. This global model is based on the coupling between a behavioral electrical model derived from the transistor-level description of the amplifier and a thermal reduced model. This model, implemented into a circuit simulator, allows to predict the impact of the thermal effects in pulsed RF mode thanks to an envelope transient analysis. This approach has also been validated by measurements.

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Cite this paper

@article{Mazeau2007BehavioralTM, title={Behavioral Thermal Modeling for Microwave Power Amplifier Design}, author={Julie Mazeau and R. Sommet and Daniel Caban-Chastas and Emmanuel Gatard and R. Quere and Yves Mancuso}, journal={IEEE Transactions on Microwave Theory and Techniques}, year={2007}, volume={55}, pages={2290-2297} }