Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells

@article{Shin2000BarrierwidthDO,
  title={Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells},
  author={E. Shin and J. Li and J. Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
  year={2000},
  volume={77},
  pages={1170-1172}
}
We present the results of picosecond time-resolved photoluminescence (PL) measurements for a set of 30 A well GaN/AlxGa1−xN (x∼0.2) multiple-quantum-well (MQW) structures with varying barrier widths LB from 30 to 100 A, grown by metalorganic chemical-vapor deposition. The PL quantum efficiency and the recombination lifetime of these MQWs were observed to increase monotonously with an increase of the barrier width up to 80 A. These behaviors were explained by considering two distinct mechanisms… Expand

Figures from this paper

Growth of AlGaN-based multiple quantum wells on SiC substrates
...
1
2
...

References

SHOWING 1-10 OF 13 REFERENCES
...
1
2
...