Barrier/liner stacks for scaling the Cu interconnect metallization

@article{Veen2016BarrierlinerSF,
  title={Barrier/liner stacks for scaling the Cu interconnect metallization},
  author={Marleen H. van der Veen and Nicolas Jourdan and Victor Vega Gonzalez and Christopher James Wilson and N. Heylen and O. Varela Pedreira and Herbert Struyf and K. Croes and Jurgen Bommels and Zs. Tőkei},
  journal={2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)},
  year={2016},
  pages={28-30}
}
Self-forming barriers and advanced liner materials are studied extensively for their Cu gapfill performance and interconnect scaling. In this paper, 22nm1/2 pitch Cu low-k interconnects with barrier (Mn-based, TaN) /liner (Co, Ru) combinations are compared and benchmarked for their resistivity, resistance scaling, and electromigration (EM) performance. Extendibility to 16nm copper width was explored experimentally and a projection towards 12nm width is performed. It is found that the Ru-liner… CONTINUE READING

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