Bandstructure Effects in Silicon Nanowire Electron Transport

@article{Neophytou2008BandstructureEI,
  title={Bandstructure Effects in Silicon Nanowire Electron Transport},
  author={N. Neophytou and A. Pa{\'u}l and M. Lundstrom and Gerhard Klimeck},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={1286-1297}
}
  • N. Neophytou, A. Paúl, +1 author Gerhard Klimeck
  • Published 2008
  • Materials Science, Physics
  • IEEE Transactions on Electron Devices
  • Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semiempirical atomistic tight-binding model coupled to a self-consistent Poisson solver is used for the dispersion calculation. A semi-classical, ballistic FET model is used to evaluate the current-voltage characteristics. It is found that the total gate capacitance is degraded from the oxide capacitance value… CONTINUE READING
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