Bandstructure Effects in Silicon Nanowire Electron Transport

  title={Bandstructure Effects in Silicon Nanowire Electron Transport},
  author={N. Neophytou and A. Pa{\'u}l and M. Lundstrom and Gerhard Klimeck},
  journal={IEEE Transactions on Electron Devices},
  • N. Neophytou, A. Paúl, +1 author Gerhard Klimeck
  • Published 2008
  • Materials Science, Physics
  • IEEE Transactions on Electron Devices
  • Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semiempirical atomistic tight-binding model coupled to a self-consistent Poisson solver is used for the dispersion calculation. A semi-classical, ballistic FET model is used to evaluate the current-voltage characteristics. It is found that the total gate capacitance is degraded from the oxide capacitance value… CONTINUE READING
    160 Citations

    Figures from this paper.

    Bandstructure Effects in Silicon Nanowire Hole Transport
    • 45
    • PDF
    Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs
    • 8
    Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs
    • 18
    • Highly Influenced
    Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
    • 60
    A comprehensive atomistic analysis of bandstructure velocities in si nanowires
    • 4
    • PDF
    Performances of Strained Nanowire Devices: Ballistic Versus Scattering-Limited Currents
    • 20


    Simulations of nanowire transistors: atomistic vs. effective mass models
    • 36
    • PDF
    Band-Structure Effects in Ultrascaled Silicon Nanowires
    • 80
    Ge/Si nanowire heterostructures as high-performance field-effect transistors
    • 1,194
    • PDF
    Quantum confinement and electronic properties of silicon nanowires.
    • 370