Bandgap opening in graphene induced by patterned hydrogen adsorption.

@article{Balog2010BandgapOI,
  title={Bandgap opening in graphene induced by patterned hydrogen adsorption.},
  author={Richard M. Balog and Bjarke J{\o}rgensen and Louis Nilsson and Mie Them Andersen and Emile E D Rienks and Marco Bianchi and Mattia Fanetti and Erik Laegsgaard and Alessandro Baraldi and Silvano Lizzit and Zeljko V Sljivancanin and Flemming Besenbacher and Bj{\o}rk Hammer and Thomas G Pedersen and Philip Hofmann and Liv Hornekaer},
  journal={Nature materials},
  year={2010},
  volume={9 4},
  pages={
          315-9
        }
}
Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices. The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication. However, graphene lacks a bandgap around the Fermi level, which is the defining… CONTINUE READING
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