Band offsets and Fermi level pinning at metal-Al2O3 interfaces


Disparities between the predicted and the measured effective work functions (EWFs) in advanced metal oxide semiconductor devices, or Fermi-level pinning (FLP), have gained significant attention when high-k dielectrics began to emerge. Using a systematic approach for EWF extraction, combined with a comparison to unpinned SiO2 references, it was found that no… (More)


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