Band-gap engineering: from physics and materials to new semiconductor devices.

@article{Capasso1987BandgapEF,
  title={Band-gap engineering: from physics and materials to new semiconductor devices.},
  author={Federico Capasso},
  journal={Science},
  year={1987},
  volume={235 4785},
  pages={172-6}
}
Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made. The transport properties of electrons and holes can be independently and continuously tuned for a given application. A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant… CONTINUE READING
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