Band-gap design of quaternary (In,Ga)(As,Sb) semiconductors via the inverse-band-structure approach.

@article{Piquini2008BandgapDO,
  title={Band-gap design of quaternary (In,Ga)(As,Sb) semiconductors via the inverse-band-structure approach.},
  author={P. Piquini and Peter A. Graf and Alex Zunger},
  journal={Physical review letters},
  year={2008},
  volume={100 18},
  pages={186403}
}
Quaternary systems illustrated by (Ga,In)(As,Sb) manifest a huge configurational space, offering in principle the possibility of designing structures that are lattice matched to a given substrate and have given electronic properties (e.g., band gap) at more than one composition. Such specific configurations were however, hitherto, unidentified. We show here that using a genetic-algorithm search with a pseudopotential "Inverse-band-structure (IBS) approach it is possible to identify those… CONTINUE READING

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