Band-Structure Effects in Ultrascaled Silicon Nanowires

@article{Gnani2007BandStructureEI,
  title={Band-Structure Effects in Ultrascaled Silicon Nanowires},
  author={E.. Gnani and S.. Reggiani and A. Gnudi and Pietro Parruccini and Renato Colle and M.. Rudan and G.. Baccarani},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={2243-2254}
}
In this paper, we investigate band-structure effects on the transport properties of ultrascaled silicon nanowire FETs operating under quantum-ballistic conditions. More specifically, we expand the dispersion relationship epsiv(kappa) in a power series up to the third order in kappa2 and generate the corresponding higher order operator to be used within the single-electron Hamiltonian for the solution of the Schrodinger equation. We work out a hierarchy of nonparabolic models accounting for the… CONTINUE READING
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