Band-Structure Effects in Ultrascaled Silicon Nanowires

  title={Band-Structure Effects in Ultrascaled Silicon Nanowires},
  author={E.. Gnani and S.. Reggiani and A. Gnudi and Pietro Parruccini and Renato Colle and M.. Rudan and G.. Baccarani},
  journal={IEEE Transactions on Electron Devices},
In this paper, we investigate band-structure effects on the transport properties of ultrascaled silicon nanowire FETs operating under quantum-ballistic conditions. More specifically, we expand the dispersion relationship epsiv(kappa) in a power series up to the third order in kappa2 and generate the corresponding higher order operator to be used within the single-electron Hamiltonian for the solution of the Schrodinger equation. We work out a hierarchy of nonparabolic models accounting for the… CONTINUE READING
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Publications referenced by this paper.
Showing 1-10 of 24 references

5nm-gate nanowire FinFET

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. • 2004
View 15 Excerpts
Highly Influenced

Extreme scaling with ultra-thin Si channel MOSFETs

Digest. International Electron Devices Meeting, • 2002
View 3 Excerpts
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A solution of the effective-mass Schrödinger equation in general isotropic and nonparabolic bands for the study of two-dimensional carrier gases

F. Gomez-Campos, S. Rodriguez-Bolivar, J. A. Lopez-Villanueva, J. A. Jimenez-Tejada, J. Carceller
J. Appl. Phys., vol. 98, no. 3, pp. 033 717-1–033 717-7, Aug. 2005. and references therein. • 2005
View 3 Excerpts
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Electronic properties of silicon nanowires

Y. Zheng, C. Rivas, +3 authors G. Klimeck
IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1097–1103, Jun. 2005. • 2005
View 8 Excerpts
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Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. • 2005
View 5 Excerpts
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On the validity of the parabolic effective-mass approximation for the I−V calculation of silicon nanowire transistors

J. Wang, A. Rahman, A. Ghosh, G. Klimeck, M. Lundstrom
IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1589–1595, Jul. 2005. • 2005
View 5 Excerpts
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Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors

2006 International Conference on Simulation of Semiconductor Processes and Devices • 2006
View 1 Excerpt

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