Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability

@article{Kirsch2006BandEN,
  title={Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability},
  author={P. D. Kirsch and M. A. Quevedo-Lopez and S. A. Krishnan and Christof Krug and H. Alshareef and C. Park and Rusty Harris and Naim Moumen and A. Neugroschel and Gennadi Bersuker and B V Lee and J. G. Wang and Garima Pant and B E Gnade and M. J. Kim and R. M. Wallace and J. Jur and D. J. Lichtenwalner and A. I. Kingon and Raj Jammy},
  journal={2006 International Electron Devices Meeting},
  year={2006},
  pages={1-4}
}
We demonstrate, for the first time, a HfLaSiON/metal gate stack that concurrently achieves the following: low threshold voltage (V<sub>T </sub>=0.33V), low equivalent oxide thickness (EOT=0.91nm) (T<sub>inv </sub>=1.3nm) and 83% SiO<sub>2</sub> mobility. Key enablers of this result are 1) La doped HfSiON for n-FET V<sub>T</sub> tuning 2) HfO<sub>2</sub>:SiO<sub>2</sub> alloy ratio with 10% SiO<sub>2</sub> suppressing crystallization up to 1070degC, 3) interlayer SiO<sub>2 </sub> (IL) to reduced… CONTINUE READING
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et al

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