Ballistic transport of graphene pnp junctions with embedded local gates.

Abstract

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding… (More)
DOI: 10.1088/0957-4484/22/41/415203

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