Ballistic transport of graphene pnp junctions with embedded local gates.


We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding… (More)
DOI: 10.1088/0957-4484/22/41/415203


Figures and Tables

Sorry, we couldn't extract any figures or tables for this paper.

Slides referencing similar topics