Ballistic transport of graphene pnp junctions with embedded local gates.

@article{Nam2011BallisticTO,
  title={Ballistic transport of graphene pnp junctions with embedded local gates.},
  author={Seunggeol Nam and Dong-Keun Ki and Jong Wan Park and Youngwook Kim and Jun Sung Kim and Hu-Jong Lee},
  journal={Nanotechnology},
  year={2011},
  volume={22 41},
  pages={
          415203
        }
}
We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about… Expand
A ballistic pn junction in suspended graphene with split bottom gates
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layerExpand
Visualisation of edge effects in side-gated graphene nanodevices
TLDR
It is demonstrated that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60–125 nm width, whereas the bulk of the material is electron doped. Expand
Low-Magnetic-Field Regime of a Gate-Defined Constriction in High-Mobility Graphene.
TLDR
increasing further the magnetic field allows us to probe the Landau level spectrum in the constriction and unveil distortions due to the combination of confinement and deconfinement of Landau levels in a saddle potential. Expand
Tunable nano Peltier cooling device from geometric effects using a single graphene nanoribbon
Based on the phenomenon of curvature-induced doping in graphene we propose a class of Peltier cooling devices, produced by geometrical effects, without gating. We show how a graphene nanoribbon laidExpand
Dirac fermion optics and directed emission from single- and bilayer graphene cavities
High-mobility graphene hosting massless charge carriers with linear dispersion provides a promising platform for electron optics phenomena. Inspired by the physics of dielectric opticalExpand
Efficient quantum transport simulation for bulk graphene heterojunctions
The quantum transport formalism based on tight-binding models is known to be powerful in dealing with a wide range of open physical systems subject to external driving forces but is, at the sameExpand
Gate-induced carrier density modulation in bulk graphene: theories and electrostatic simulation using Matlab pdetool
This article aims at providing a self-contained introduction to theoretical modeling of gate-induced carrier density in graphene sheets. For this, relevant theories are introduced, namely, classicalExpand
Equilibration of quantum Hall edges in symmetry-broken bilayer graphene
Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regimes when all the degeneracies of the zero energy Landau level areExpand
Gate tunable spin transport in graphene with Rashba spin-orbit coupling
Abstract Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in singleExpand
Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots.
TLDR
To realize a stadium-shaped QD, the tip of a scanning tunneling microscope is utilized to charge defects in a supporting hexagonal boron nitride flake and the stadium states visualized are consistent with tight-binding-based simulations but lack clear quantum chaos signatures. Expand
...
1
2
...

References

SHOWING 1-10 OF 29 REFERENCES
Conductance of p-n-p graphene structures with "air-bridge" top gates.
TLDR
Graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate are fabricated. Expand
Electronic transport and quantum hall effect in bipolar graphene p-n-p junctions.
TLDR
A series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions are observed, which exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. Expand
Fabrication of graphene p-n-p junctions with contactless top gates
We developed a multilevel lithography process to fabricate graphene p-n-p junctions with contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomicExpand
Quantized Transport in Graphene p-n Junctions in a Magnetic Field
TLDR
This work explains the observed conductance quantization, which is fractional in the bipolar regime and an integer in the unipolar regime, in terms of quantum Hall edge modes propagating along and across the p-n interface. Expand
Transport measurements across a tunable potential barrier in graphene.
TLDR
A gate-tunable potential barrier within a single-layer graphene sheet is created and measurements of electrical transport across this structure as the tunable barrier potential is swept through a range of heights. Expand
Boron nitride substrates for high-quality graphene electronics.
TLDR
Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2). Expand
Quantum Hall resistances of a multiterminal top-gated graphene device
Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J.Expand
Snake states along graphene p-n junctions.
TLDR
This work investigates transport in locally gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge, which provides an experimental signature of snake states, which zigzag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Expand
Quantum interference and Klein tunnelling in graphene heterojunctions
The observation of oscillations in the conductance characteristics of narrow graphene p–n-junctions confirms their ability to collimate ballistic carriers. Moreover, the phase of these oscillationsExpand
Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene
TLDR
The realization of a single-layer graphene p-n junction is reported in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating, consistent with recent theory. Expand
...
1
2
3
...