Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer

@inproceedings{Kojima2005BallisticTM,
  title={Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer},
  author={Akira Kojima and Nobuyoshi Koshida},
  year={2005}
}
The electron transport mechanism in nanocrystalline porous silicon (nc-PS) with a controlled structure has been studied for a self-supporting sample by time-of-flight (TOF) measurements at room and low temperatures using a picosecond-width UV laser pulse. In contrast to both single-crystalline silicon (c‐Si) and hydrogenated amorphous silicon (a‐Si:H), the TOF signals of nc-PS show characteristic behavior that involves a ballistic component. The drift velocity vd determined from observed TOF… CONTINUE READING