Ballistic electron impact ionization in GaAs and in InP avalanche devices

It is shown that electrons have a high probability Pth of ballistically gaining the ionization threshold energy when a high electric field E(>4×105V/cm) is applied along certain crystal orientations in GaAs and InP avalanche devices. In GaAs we find Pth() < Pth(), whereas in InP the opposite occurs indicating a strong band structure dependence of the… (More)