Ballistic carbon nanotube field-effect transistors

  title={Ballistic carbon nanotube field-effect transistors},
  author={Ali Javey and Jing Guo and Qian Wang and Mark Lundstrom and Hongjie Dai},
A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube–metal junctions. These energy barriers severely limit transistor conductance in the ‘ON’ state, and reduce the current delivery capability—a key determinant of device performance. Here we show that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with… 

Advancements in complementary carbon nanotube field-effect transistors

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Schottky barrier formation at a carbon nanotube—metal junction

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Early theoretical work on single-walled carbon nanotubes predicted that a special achiral subset of these structures known as armchair nanotubes should be metallic. Tans et al. have recently

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Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

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Recent decades have witnessed remarkable and continuing improvements in the performance of field-effect transistors (FETs). These improvements result largely from aggressive scaling of devices to