• DOI:10.1021/acs.nanolett.7b02380
• Corpus ID: 206742375

Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

@article{Yang2017BallisticPP,
  title={Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.},
  author={Lin Yang and Qian Zhang and Zhiguang Cui and Matthew Gerboth and Yang Zhao and Terry Ting Xu and D. Greg Walker and Deyu Li},
  journal={Nano letters},
  year={2017},
  volume={17 12},
  pages={
          7218-7225
        }
}

• Lin Yang, Qian Zhang, +5 authors Deyu Li
• Published 7 November 2017
• Physics
• Nano letters

Thermal transport in amorphous silicon dioxide (a-SiO2) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO2. With solid experimental data demonstrating ballistic phonon transport through a-SiO2, this work should provide important insight into thermal management of electronic devices.