Corpus ID: 119707210

Ballistic Graphene Nanoribbon MOSFETs: a full quantum real-space simulation study

@article{Liang2007BallisticGN,
  title={Ballistic Graphene Nanoribbon MOSFETs: a full quantum real-space simulation study},
  author={G. Liang and N. Neophytou and Mark S. Lundstrom and D. Nikonov},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2007}
}
  • G. Liang, N. Neophytou, +1 author D. Nikonov
  • Published 2007
  • Physics
  • arXiv: Mesoscale and Nanoscale Physics
  • A real-space quantum transport simulator for carbon nanoribbon (CNR) MOSFETs has been developed. Using this simulator, the performance of carbon nanoribbon (CNR) MOSFETs is examined in the ballistic limit. The impact of quantum effects on device performance of CNR MOSFETs is also studied. We found that 2D semi-infinite graphene contacts provide metal-induced-gap-states (MIGS) in the CNR channel. These states would provide quantum tunneling in the short channel device and cause Fermi level… CONTINUE READING

    References

    SHOWING 1-10 OF 26 REFERENCES
    Ballistic carbon nanotube field-effect transistors
    • 2,526
    • PDF
    Half-metallic graphene nanoribbons
    • 2,679
    • PDF