BTI reliability of 45 nm high-K + metal-gate process technology

@article{Pae2008BTIRO,
  title={BTI reliability of 45 nm high-K + metal-gate process technology},
  author={S. Pae and M. Agostinelli and Matt Brazier and Robert Chau and Gilbert Dewey and Tahir Ghani and Michael Hattendorf and Jeffrey T. Hicks and J. Kavalieros and Kelin Kuhn and M{\'e}lanie Kuhn and J. A. Maiz and Matthew J Metz and K. Mistry and C. Prasad and S. Ramey and A. M. Roskowski and J. Sandford and Ch. Thomas and J{\"u}rgen Thomas and Christopher J. Wiegand and Jami Wiedemer},
  journal={2008 IEEE International Reliability Physics Symposium},
  year={2008},
  pages={352-357}
}
In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is discussed. Transistors with an unoptimized HK film stack in the early development phase exhibited pre-existing traps and large amount of hysteresis that was consistent with literature. The optimized and final HK process demonstrated NMOS and PMOS BTI on HK+MG transistors that are better than that of SiON at matched E-fields and comparable… CONTINUE READING
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