BEOL compatible 2D layered materials as ultra-thin diffusion barriers for Cu interconnect technology

Abstract

Diffusion barriers based on Ta and Ti related materials have been used in Cu interconnect technology to mitigate Cu diffusion into damascene structures. Along with the scaling of VLSI circuits, Cu interconnects scaling is demanded as well. To maximize the Cu volume in its trench for lower line resistance, the thickness of the diffusion barrier should be… (More)

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Cite this paper

@article{Lo2017BEOLC2, title={BEOL compatible 2D layered materials as ultra-thin diffusion barriers for Cu interconnect technology}, author={Chun-Li Lo and Shengjiao Zhang and Tingting Shen and J{\"{o}rg Appenzeller and Zhihong Chen}, journal={2017 75th Annual Device Research Conference (DRC)}, year={2017}, pages={1-2} }