BCD8 from 7V to 70V: a new 0.l8μm Technology Platform to Address the Evolution of Applications towards Smart Power ICs with High Logic Contents

@article{Riccardi2007BCD8F7,
  title={BCD8 from 7V to 70V: a new 0.l8μm Technology Platform to Address the Evolution of Applications towards Smart Power ICs with High Logic Contents},
  author={Damiano Riccardi and Alessandro Causio and I. Filippi and A. Paleari and L.V.A. Pregnolato and Paola Galbiati and Claudio Contiero},
  journal={Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's},
  year={2007},
  pages={73-76}
}
This paper presents the 8th BCD generation integrating power and high voltage devices in a 0.18 μm technology node platform. Both dense 1.8 V and 3.3 V logic CMOS are available to realize complex monolithic solutions in the field of smart power applications. 
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0 " Optical properties of silicon thin films related to LPCVD growth o 9 I n zBCD 8 condition

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