Avoiding Si MOSFET Avalanche and Achieving Zero-Voltage Switching for Cascode GaN Devices

@article{Huang2016AvoidingSM,
  title={Avoiding Si MOSFET Avalanche and Achieving Zero-Voltage Switching for Cascode GaN Devices},
  author={Xiucheng Huang and Weijing Du and Fred C. Lee and Qiang Li and Zhengyang Liu},
  journal={IEEE Transactions on Power Electronics},
  year={2016},
  volume={31},
  pages={593-600}
}
The cascode structure is widely used for high-voltage normally-on wide-bandgap devices. However, the interaction between the high-voltage normally-on device and the low-voltage normally-off Si MOSFET may induce undesired features. This paper analyzes the voltage distribution principle during the turn-off transition as well as the zero-voltage-switching (ZVS) principle during the turn-on transition for cascode GaN devices. The capacitance mismatch between high-voltage normally-on GaN switch and… CONTINUE READING
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