Avalanche Breakdown Characteristics of Al1–xGaxAs0.56Sb0.44 Quaternary Alloys

  title={Avalanche Breakdown Characteristics of Al1–xGaxAs0.56Sb0.44 Quaternary Alloys},
  author={Xinxin Zhou and Songhua Zhang and John P. R. David and Jo Shien Ng and C. H. Tan},
  journal={IEEE Photonics Technology Letters},
Avalanche breakdown characteristics are essential for designing avalanche photodiodes. In this letter, we investigated the effects of adding Ga to Al<sub>1-x</sub>Ga<sub>x</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> quaternary alloys. Using p-i-n diodes with a 100-nm i-region and alloy composition ranging from x=0 to 0.15, we found that the bandgap energy of Al<sub>1-x</sub>Ga<sub>x</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> reduces from 1.64 to 1.56 eV. The corresponding avalanche breakdown voltage… CONTINUE READING


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