Avalanche Breakdown Characteristics of Al1–xGaxAs0.56Sb0.44 Quaternary Alloys

@article{Zhou2016AvalancheBC,
  title={Avalanche Breakdown Characteristics of Al1–xGaxAs0.56Sb0.44 Quaternary Alloys},
  author={Xinxin Zhou and Songhua Zhang and John P. R. David and Jo Shien Ng and C. H. Tan},
  journal={IEEE Photonics Technology Letters},
  year={2016},
  volume={28},
  pages={2495-2498}
}
Avalanche breakdown characteristics are essential for designing avalanche photodiodes. In this letter, we investigated the effects of adding Ga to Al<sub>1-x</sub>Ga<sub>x</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> quaternary alloys. Using p-i-n diodes with a 100-nm i-region and alloy composition ranging from x=0 to 0.15, we found that the bandgap energy of Al<sub>1-x</sub>Ga<sub>x</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> reduces from 1.64 to 1.56 eV. The corresponding avalanche breakdown voltage… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-10 of 15 references

Refractive index of AlAs

  • R. E. Fern, A. Onton
  • J. Appl. Phys., vol. 42, no. 9, pp. 3499–3500…
  • 1971
Highly Influential
4 Excerpts

The physics of high-efficiency thin-film III-V solar cells

  • R. E. Welser
  • Solar Cells—New Approaches and Reviews, L. A…
  • 2015
1 Excerpt

Optical dielectric functions of wurtzite III-V semiconductors

  • A. De, C. E. Pryor
  • Phys. Rev. B, vol. 85, p. 125201, Mar. 2012.
  • 2012
1 Excerpt

Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors

  • S. Adachi
  • Sussex, U.K.: Wiley,
  • 2009
2 Excerpts

Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

  • B. K. Ng
  • IEEE Trans. Electron Devices, vol. 48, no. 10, pp…
  • 2001
1 Excerpt

Interband Absorption in Optical Properties of Solids

  • M. Fox
  • 2001
1 Excerpt

Impact ionization in thin Alx Ga1−x As (x=0.15 and 0.30) p-i-n diodes

  • S. A. Plimmer
  • J. Appl. Phys., vol. 82, no. 3, pp. 1231–1235…
  • 1997
2 Excerpts

Similar Papers

Loading similar papers…