Aufdampfschidhten aus halbleitenden III-V-Verbindungen

@article{Gnther1958AufdampfschidhtenAH,
  title={Aufdampfschidhten aus halbleitenden III-V-Verbindungen},
  author={Klaus G{\"u}nther},
  journal={Zeitschrift f{\"u}r Naturforschung A},
  year={1958},
  volume={13},
  pages={1081 - 1089}
}
  • K. Günther
  • Published 1958
  • Zeitschrift für Naturforschung A
Es wird über Versuche zum Aufdampfen dünner Schichten der III—V-Verbindungen InAs und InSb berichtet. Das hierzu benützte „3-Temperaturverfahren“ fordert im wesentlichen eine kritische Einstellung der beiden — zur getrennten Verdampfung der Einzelkomponenten vorgesehenen — Tiegeltemperaturen T1 und T2 sowie der Temperatur T3 der Auffängerfläche. Dabei sind T1 und T2 so zu wählen, daß die leichtflüchtige Komponente in der Dampfphase im Überschuß vorliegt. Die geeignete Wahl der Trägertemperatur… 

Creating emergent phenomena in oxide superlattices

Complex oxides are record holder materials for many phenomena, including ferroelectricity, piezoelectricity, superconductivity and multiferroicity. Complex oxides often have competing ground states

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band

Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy

Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases

Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices

An In0.53Ga0.47As/indium phosphide (InP) avalanche photodiode (APD) with a separate absorption, grading, charge, and multiplication (SAGCM) structure is epitaxially grown by molecular beam epitaxy

Canonical approach to cation flux calibration in oxide molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is the gold standard for the epitaxial growth of complex oxides with the best material properties as determined by respective figures of merit. Unfortunately, once more

New approaches for achieving more perfect transition metal oxide thin films

This perspective considers the enormous promise of epitaxial functional transition metal oxide thin films for future applications in low power electronic and energy applications since they offer

Film deposition by thermal laser evaporation

We study the thermal evaporation of materials by irradiation with laser light to deposit layers with atomically precise thickness. Under ultrahigh to moderate vacuum pressures, a focused laser beam

Methods of Epitaxy

  • U. W. Pohl
  • Materials Science
    Graduate Texts in Physics
  • 2020
The fabrication of a semiconductor heterostructure with atomically sharp interfaces requires epitaxial growth. This chapter focuses on the widely applied growth techniques of liquid-phase epitaxy

Properties and Growth of Semiconductors

Molecular Beam Epitaxy for Oxide Electronics