Atomically thin p-n junctions with van der Waals heterointerfaces.

  title={Atomically thin p-n junctions with van der Waals heterointerfaces.},
  author={Chul-Ho Lee and Gwan-Hyoung Lee and Arend M van der Zande and Wenchao Chen and Yu Bo Li and Minyong Han and Xu Cui and Ghidewon Arefe and Colin Nuckolls and Tony F Heinz and Jing Guo and James C. Hone and Philip H. Kim},
  journal={Nature nanotechnology},
  volume={9 9},
Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their… CONTINUE READING
Highly Cited
This paper has 285 citations. REVIEW CITATIONS
Related Discussions
This paper has been referenced on Twitter 2 times. VIEW TWEETS

From This Paper

Figures, tables, and topics from this paper.


Publications citing this paper.
Showing 1-10 of 181 extracted citations

285 Citations

Citations per Year
Semantic Scholar estimates that this publication has 285 citations based on the available data.

See our FAQ for additional information.


Publications referenced by this paper.
Showing 1-10 of 42 references

Exciton dynamics in suspended mono layer and few-layer MoS2 2D crystals

Shi, Y H.
ACS Nano 7, • 2013

Similar Papers

Loading similar papers…