Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy.

  title={Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy.},
  author={Andreas Fuhrer and F. J. Ruess and Nikolaj Moll and Alessandro Curioni and Daniel Widmer},
  journal={Physical review letters},
  volume={109 14},
At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations as due to the interplay between the Si dimer buckling phase near the wire and the orientation of the Mn trimer. We study… 

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Surf. Sci

  • Surf. Sci
  • 1998

Jpn. J. of App. Phys

  • Jpn. J. of App. Phys
  • 2000

Copyright MPI für Festkörperforschung Stuttgart 1997-2001

  • Copyright MPI für Festkörperforschung Stuttgart 1997-2001
  • 1990

Appl. Phys. Lett

  • Appl. Phys. Lett
  • 1991


  • Sci. Technol. 17, 377
  • 2002

J. Vac. Sci. Technol. B

  • J. Vac. Sci. Technol. B
  • 1994

Solid State Commun

  • Solid State Commun
  • 2011

Phys. Rev. B

  • Phys. Rev. B
  • 1991

J. Phys.: Condens. Matter

  • J. Phys.: Condens. Matter
  • 2004

Ultramicroscopy 73

  • 169
  • 1998