Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001).

@article{Montalenti2004AtomicscalePO,
  title={Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001).},
  author={Francesco Montalenti and Paolo Raiteri and Dmitri B. Migas and H von K{\"a}nel and A. Rastelli and Carlos Manzano and G. Costantini and U. Denker and Oliver G. Schmidt and K. Kern and Leo Miglio},
  journal={Physical review letters},
  year={2004},
  volume={93 21},
  pages={216102}
}
By high resolution scanning tunneling microscopy, we investigate the morphological transition from pyramid to dome islands during the growth of Ge on Si(001). We show that pyramids grow from top to bottom and that, from a critical size on, incomplete facets are formed. We demonstrate that the bunching of the steps delimiting these facets evolves into the steeper dome facets. Based on first principles and Tersoff-potential calculations, we develop a microscopic model for the onset of the… CONTINUE READING

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