Atomic scale models of ion implantation and dopant diffusion in silicon

@inproceedings{Theiss2000AtomicSM,
  title={Atomic scale models of ion implantation and dopant diffusion in silicon},
  author={Silva K. Theiss and Mar{\'i}a J. Caturla and Megan D. Johnson and Jianxin Zhu and T. Lenosky and Babak Sadigh and Tomas Diaz de la Rubia},
  year={2000}
}
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First-principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self… CONTINUE READING