Atomic-scale defect control on hydrogen-terminated silicon surface at wafer scale

@inproceedings{Sakaue2001AtomicscaleDC,
  title={Atomic-scale defect control on hydrogen-terminated silicon surface at wafer scale},
  author={Hiroyuki Sakaue and Shinya Fujiwara and Shoso Shingubara and Takayuki Higashi-Hiroshima Takahagi},
  year={2001}
}
We have developed a wet preparation method for an atomically defect-free Si wafer surface. In the conventional atomically smooth treatment using ammonium fluoride aqueous solution, dissolved oxygen has been revealed to form defects on the Si (111) surface. We have been able to create an extremely atomically smooth hydrogen-terminated surface with a good periodic step/terrace structure. Moreover, the ordered surface structure was confirmed to be fabricated all over the wafer surface. The atomic… CONTINUE READING

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