Atomic relaxations at the (0001) surface of Bi2Se3 single crystals and ultrathin films

Abstract

Sumalay Roy,1 H. L. Meyerheim,1,* K. Mohseni,1 A. Ernst,1,2 M. M. Otrokov,3,4 M. G. Vergniory,1,3 G. Mussler,5 J. Kampmeier,5 D. Grützmacher,5 C. Tusche,1 J. Schneider,6 E. V. Chulkov,3,4,7 and J. Kirschner1,8 1Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany 2Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstraße 2, 04103 Leipzig, Germany 3Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Spain 4Tomsk State University, 634050 Tomsk, Russia 5Peter Grünberg Institute 9, Forschungzentrum Jülich, D-52425 Jülich, Germany and JARA, Fundamentals of Future Information Technologies 6Department für Geowissenschaften, Ludwig-Maximilians Universität München, D-80333 München, Germany 7Departamento de Fı́sica de Materiales UPV/EHU, Centro de Fı́sica de Materiales CFM–MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Spain 8Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, D-06099 Halle, Germany (Received 30 July 2014; revised manuscript received 21 September 2014; published 30 October 2014)

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Cite this paper

@inproceedings{Roy2014AtomicRA, title={Atomic relaxations at the (0001) surface of Bi2Se3 single crystals and ultrathin films}, author={Sumalay Roy and Holger L. Meyerheim and Katayoon Mohseni and Anna Ernst and Mikhail M Otrokov and M. G. Vergniory and Gregor Mussler and J{\"{o}rn Kampmeier and Detlev Gr{\"{u}tzmacher and Christian Tusche and J. Schneider and Eugene V. Chulkov and Jennifer Kirschner}, year={2014} }