Atomic-layer-deposited silicon-nitride/SiO2 stack--a highly potential gate dielectrics for advanced CMOS technology

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@article{Nakajima2002AtomiclayerdepositedSS, title={Atomic-layer-deposited silicon-nitride/SiO2 stack--a highly potential gate dielectrics for advanced CMOS technology}, author={Anri Nakajima and Quazi D. M. Khosru and Takashi Yoshimoto and Shin Yokoyama}, journal={Microelectronics Reliability}, year={2002}, volume={42}, pages={1823-1835} }