Atomic layer deposited (ALD) Zinc Oxide film characterization for NEMS and MEMS

@article{Kotha2010AtomicLD,
  title={Atomic layer deposited (ALD) Zinc Oxide film characterization for NEMS and MEMS},
  author={R. Kotha and David Elam and Greg Collins and Necip Guven and Andrey Chabanov and CL. Chen and A. A. Ayon},
  journal={2010 Symposium on Design Test Integration and Packaging of MEMS/MOEMS (DTIP)},
  year={2010},
  pages={185-189}
}
We report the deposition and characterization of thin ZnO films on ≪100≫ silicon substrates employing Atomic layer deposition (ALD). This technique is considered to have a great potential for nano-scale applications due to its excellent conformality, total surface coverage, uniformity, accurate thickness control, its ability to deposit high k-dielectrics… CONTINUE READING