Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al/sub 2/O/sub 3/ (0001) by plasma-assisted molecular beam epitaxy

@article{Kostopoulos2000AtomicFM,
  title={Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al/sub 2/O/sub 3/ (0001) by plasma-assisted molecular beam epitaxy},
  author={A. Kostopoulos and S. Mikroulis and Emmanouil Dimakis and Katerina Tsagaraki and G. Constantinidis and Alexandros Georgakilas},
  journal={ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)},
  year={2000},
  pages={355-358}
}
GaN thin films were grown on Al/sub 2/O/sub 3/ (0001) substrates by RF-plasma assisted molecular beam epitaxy with either N-face or the Ga-face polarity. Atomic force microscopy was used to investigate the surface morphology and the polarity of the GaN films. Etching in a KOH solution always resulted in a significant increase in the surface roughness of the N-face material, with characteristic pyramid-shaped features. On the contrary, the KOH solution did not modify the surface morphology of… CONTINUE READING