Atomic Scale Strain Measurement for Nanoelectronic Devices

@article{Tung2007AtomicSS,
  title={Atomic Scale Strain Measurement for Nanoelectronic Devices},
  author={C. H. Tung and Kin Leong Pey and Fu Qinrong and Bronwyn L. Fox},
  journal={2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits},
  year={2007}
}
Atomic scale lattice strain measurement using high resolution transmission electron microscopic (HR- TEM) is an important application for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45 nm metal-oxide- semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed… CONTINUE READING