Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si

@article{Beck2006AtomicScaleMF,
  title={Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si},
  author={Matthew J Beck and L. Tsetseris and M. Caussanel and R. D. Schrimpf and D. M. Fleetwood and S. T. Pantelides},
  journal={IEEE Transactions on Nuclear Science},
  year={2006},
  volume={53},
  pages={3621-3628}
}
While calculated non-ionizing energy loss (NIEL) generally correlates well to first order with radiation-induced displacement damage rates, it does not account for some well-known differences in damage rates for n- and p-type Si. Here we show that the magnitude of these differences, DeltaKn-p, correlates closely with the fraction of total displacement damage due to low-energy primary knock-on atom (PKA) recoils. The primary products of these displacement damage events, with PKA recoils <~ 2 keV… CONTINUE READING

Citations

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Displacement Damage Effects in Irradiated Semiconductor Devices

IEEE Transactions on Nuclear Science • 2013
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“Effective NIEL” in silicon: Calculation using molecular dynamic simulation results

2009 European Conference on Radiation and Its Effects on Components and Systems • 2009
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