Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels.

@article{Chen2017AtomicSD,
  title={Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels.},
  author={Renjie Chen and Katherine Leigh Jungjohann and William Moyer Mook and John J. Nogan and Shadi A Dayeh},
  journal={Nano letters},
  year={2017},
  volume={17 4},
  pages={
          2189-2196
        }
}
Alloyed and compound contacts between metal and semiconductor transistor channels enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. Here, we report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In0.53Ga0.47As), along the cross-section… CONTINUE READING
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