Asymmetric halo CMOSFET to reduce static power dissipation with improved performance

@article{Bansal2005AsymmetricHC,
  title={Asymmetric halo CMOSFET to reduce static power dissipation with improved performance},
  author={Aditya Bansal and Kaushik Roy},
  journal={2005 IEEE International Symposium on Circuits and Systems},
  year={2005},
  pages={1-4 Vol. 1}
}
In this paper, we show the benefits of using asymmetric halo (AH, different source, and drainside halo doping concentrations) MOSFETs over conventional symmetric halo (SH) MOSFETs to reduce static leakage in sub-50-nm CMOS circuits. Device doping profiles have been optimized to achieve minimum leakage at iso on-current. Results show a 61% reduction in static leakage in AH nMOS transistor and a 90% reduction in static leakage in AH pMOS transistor because of reduced band-to-band tunneling… CONTINUE READING
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