Asymmetric broad waveguide diode lasers (/spl lambda/ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity

@article{Lee2002AsymmetricBW,
  title={Asymmetric broad waveguide diode lasers (/spl lambda/ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity},
  author={J. J. Lee and L. I. Mawst and Dan Botez},
  journal={IEEE Photonics Technology Letters},
  year={2002},
  volume={14},
  pages={1046-1048}
}
  • J.J. Lee, L. I. Mawst, Dan Botez
  • Published in
    IEEE Photonics Technology…
    2002
  • Physics
  • 980-nm InGaAs-InGaAsP diode lasers of asymmetric broad-waveguide (BW) transverse structure are demonstrated. Single-transverse-mode devices have equivalent (transverse) spot sizes of 0.8 /spl mu/m (i.e., significantly larger than for symmetric BW structures), which are obtained at no price in device-parameter temperature sensitivity. Built-in discrimination against the first-order transverse mode allows fundamental-transverse-mode operation in relatively narrow beams (/spl theta//sub /spl perp… CONTINUE READING

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    High brightness 810 nm long cavity diode lasers with high d//spl Gamma/ ratio in asymmetric low confinement epitaxial structure

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