Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors

@article{Guo2002AssessmentOS,
  title={Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors},
  author={Jing Guo and Supriyo Datta and M. S. Lundstrom and Markus Brink and Paul Mceuen and Ali Javey and Hongjie Dai and Hyoungsub Kim and P. C. McIntyre},
  journal={Digest. International Electron Devices Meeting,},
  year={2002},
  pages={711-714}
}
A simple model for ballistic nanotransistors, which extends previous work by treating both the charge control and the quantum capacitance limits of MOSFET-like transistors, is presented. We apply this new model to MOSFET-like carbon nanotube FETs (CNTFETs) and to MOSFETs at the scaling limit. The device physics for operation at ballistic and quantum capacitance limits are explored. Based on the analysis of recently reported CNTFETs, we compare CNTFETs to MOSFETs. The potential performance… CONTINUE READING
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