Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditions

@inproceedings{Wittmaack1998ArtifactsIL,
  title={Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditions},
  author={Klaus Wittmaack},
  year={1998}
}
The depth resolution and the accuracy of depth calibration in sputter profiling of boron delta distributions in silicon have been investigated using 1 keV O2+ ion bombardment at impact angles θ between 2° and 62° (to the surface normal) in combination with secondary ion mass spectrometry. The effect of jet-type oxygen flooding during sputter erosion was studied at 62°. For θ up to 34°, the depth resolution was essentially independent of θ (full width at half maximum, FWHM, 2.9 nm, decay length… CONTINUE READING

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