Arsenic-terminated silicon and germanium surfaces studied by scanning tunnelling microscopy

@inproceedings{BeckerArsenicterminatedSA,
  title={Arsenic-terminated silicon and germanium surfaces studied by scanning tunnelling microscopy},
  author={Ralph Sherman Becker and Tom Klitsner and James S. Vickers}
}
The epitaxial growth of As on the ‹111› and ‹100› faces of Si and the ‹111› face of Ge has been studied with vacuum tunnelling microscopy. The ‹111› faces of both semiconductors display a principally 1 × 1 termination, but differ with the presence of point defects on the Si(111):As1 × 1 surface and trenches separating large (~100 A) domains on the Ge(111):As-1 × 1 surface. I—V characteristics of the tunnel junction show a surface energy gap of approximately 1·9 eV for the Si(111):As-1 × 1… CONTINUE READING