Area-efficient power-rail ESD clamp circuit with SCR device embedded into ESD-transient detection circuit in a 65nm CMOS process

Abstract

An area-efficient power-rail electrostatic discharge (ESD) clamp circuit with silicon-controlled rectifier (SCR) as main ESD clamp device has been proposed and verified in a 65nm CMOS process. By modifying the layout structure, the ESD-transient detection circuit can be totally embedded in the SCR device. From the measured results, the proposed power-rail… (More)
DOI: 10.1109/VLDI-DAT.2013.6533801

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Cite this paper

@article{Yeh2013AreaefficientPE, title={Area-efficient power-rail ESD clamp circuit with SCR device embedded into ESD-transient detection circuit in a 65nm CMOS process}, author={Chih-Ting Yeh and Ming-Dou Ker}, journal={2013 International Symposium onVLSI Design, Automation, and Test (VLSI-DAT)}, year={2013}, pages={1-4} }