Area dependence of TDDB characteristics for HfO<sub>2</sub> gate dielectrics

Abstract

Weibull slopes, area scaling factors, and lifetime projection have been investigated for both soft breakdown and hard breakdown for the first time, in order to gain a better understanding of, the breakdown mechanism of HfO/sub 2/ gate dielectrics. The Weibull slope /spl beta/ of the hard breakdown for both the area dependence and the time-to-dielectric… (More)

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Cite this paper

@article{Kim2002AreaDO, title={Area dependence of TDDB characteristics for HfO2 gate dielectrics}, author={Young Hee Kim and Katsunori Onishi and Chang Seok Kang and Hag-Ju Cho and Renee E. Nieh and Sudhama Gopalan and R. Choi and Jeong Han and S. Krishnan and J. Lee}, journal={IEEE Electron Device Letters}, year={2002}, volume={23}, pages={594-596} }