• Materials Science
  • Published 2009

Applications of Monte Carlo Methods to Statistical Physics

@inproceedings{Howard2009ApplicationsOM,
  title={Applications of Monte Carlo Methods to Statistical Physics},
  author={Austin R. Howard and Chris H Wohlgamuth},
  year={2009}
}
An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition InxGa1-xAs1-yNy with 0 70%. 

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