Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs

@article{Aspnes1988ApplicationOR,
  title={Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs},
  author={D. E. Aspnes and J. Harbison and A. A. Studna and L. Florez},
  journal={Journal of Vacuum Science and Technology},
  year={1988},
  volume={6},
  pages={1327-1332}
}
  • D. E. Aspnes, J. Harbison, +1 author L. Florez
  • Published 1988
  • Chemistry
  • Journal of Vacuum Science and Technology
  • We perform an accuracy analysis of several possible reflectance–difference (RD) configurations that are compatible with standard molecular‐beam epitaxy (MBE) growth chambers, and describe in detail an optical‐bridge system that can determine relative changes in RD signals as small as 5×10−5 under standard growth conditions. Using this system, we determine the RD response of GaAs for changes in surface conditions at different wavelengths and correlate these to simultaneously measured reflection… CONTINUE READING
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