Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor

@article{Pejovic2015ApplicationOP,
  title={Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor},
  author={Milic M. Pejovic},
  journal={IEEE Transactions on Nuclear Science},
  year={2015},
  volume={62},
  pages={1905-1910}
}
This paper presents a comparative study of RADFETs and commercial p-channel power VDMOSFETs sensitivity to gamma-ray irradiation. Sensitivity was characterized by the threshold voltage shift determined from extrapolated linear region of transfer characteristics in saturation as a function of radiation dose. Sensitivity was followed in the dose range from 100 Gy to 500 Gy without and with + 10 V gate bias. Linear dependence between threshold voltage shift and radiation dose was established for… CONTINUE READING

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