Application of carrier lifetime control by irradiation to 1.2kV NPT IGBTs

@article{Siemieniec2004ApplicationOC,
  title={Application of carrier lifetime control by irradiation to 1.2kV NPT IGBTs},
  author={Ralf Siemieniec and Reinhard Herzer and Michael Netzel and Josef Lutz},
  journal={2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)},
  year={2004},
  volume={1},
  pages={167-170 vol.1}
}
Device simulation, based on an extended recombination model and previously determined recombination center parameters, serves as design tool for carrier-lifetime controlled, state-of-the-art 1.2kV NPT IGBTs. Homogenous and local recombination center profiles are considered. The sensitivity of important device characteristics to the type of the recombination center profile is investigated in simulation and experiment. A possible application, the improvement of reverse leakage properties of… CONTINUE READING

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