Application of Synchrotron Radiation to TXRF analysis of metal contamination on silicon wafer surfaces

@inproceedings{Pianetta2000ApplicationOS,
  title={Application of Synchrotron Radiation to TXRF analysis of metal contamination on silicon wafer surfaces},
  author={Piero A. Pianetta and Katharina Baur and Andy Singh and Sean Brennan and Jonathan Kerner ARACOR},
  year={2000}
}
Synchrotron Radiation based Total Reflection X-ray Fluorescence (TXRF) has been shown to meet the critical needs of the semiconductor industry for the analysis of transition metal impurities on silicon wafer surfaces. The current best detection limit achieved at the Stanford Synchrotron Radiation Laboratory (SSRL) for Ni is 8 x 10 atoms/cm which is a factor… CONTINUE READING