Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

@article{Krithivasan2006ApplicationOR,
  title={Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits},
  author={Ramkumar Krithivasan and P. W. Marshall and M. Nayeem and A. K. Sutton and Wei-Min Lance Kuo and B. M. Haugerud and Laleh Najafizadeh and J. D. Cressler and M. A. Carts and C. J. Marshall and D. Hansen and K. Jobe and A. McKay and Guofu Niu and R. A. Reed and B. Randall and C. A. Burfield and M. D. Lindberg and B. K. Gilbert and E C Daniel},
  journal={IEEE Transactions on Nuclear Science},
  year={2006},
  volume={53},
  pages={3400-3407}
}
Shift registers featuring radiation-hardening-by-design (RHBD) techniques are realized in IBM 8HP SiGe BiCMOS technology. Both circuit and device-level RHBD techniques are employed to improve the overall SEU immunity of the shift registers. Circuit-level RHBD techniques include dual-interleaving and gated-feedback that achieve SEU mitigation through local latch-level redundancy and correction. In addition, register-level RHBD based on triple-module redundancy (TMR) versions of dual-interleaved… CONTINUE READING
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